32014L0024 vgv 2026-10-28T10:26:47+01:00 2026-10-28+01:00 pub-undert https://vergabe.fraunhofer.de/NetServer/ gen-pub open false Secondary ion mass spectrometer (SIMS) - PR1195891-2050-W Secondary ion mass spectrometer (SIMS) - PR1195891-2050-W Secondary ion mass spectrometer (SIMS) Secondary ion mass spectrometer (SIMS) supplies 42990000 Freiburg 79108 DE131 DEU Fraunhofer-Gesellschaft, Einkauf B12 Fraunhofer-Gesellschaft, Einkauf B12 Einkauf Wissenschaftliche Geräte +49891205-0 einkauf@zv.fraunhofer.de Hansastraße 27c München 80686 DE212 DEU https://vergabe.fraunhofer.de/ Vergabekammern des Bundes Vergabekammern des Bundes +49 228 9499-0 vk@bundeskartellamt.bund.de Kaiser-Friedrich-Straße 16 Bonn 53113 DEA22 DEU Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. +49 89 1205-0 einkauf@zv.fraunhofer.de Hansastraße 27c München 80686 DE212 DEU https://www.fraunhofer.de CAMECA SAS CAMECA SAS +49 15222895868 Rene.Chemnitzer@ametek.com 29, quai des Grésillons Gennevilliers Cedex 92230 FR105 FRA Datenservice Öffentlicher Einkauf (in Verantwortung des Beschaffungsamts des BMI) Datenservice Öffentlicher Einkauf (in Verantwortung des Beschaffungsamts des BMI) +49228996100 noreply.esender_hub@bescha.bund.de Bonn 53119 DEA22 DEU Secondary ion mass spectrometer (SIMS) - PR1195891-2050-W Secondary ion mass spectrometer (SIMS) - PR1195891-2050-W 1 pc. The objective is to procure a highly sensitive SIMS instrument for depth‑profiled chemical analysis of semiconductor materials and structures, offering high depth resolution and high mass resolving power. The system shall enable precise dopant and impurity profiling, as well as accurate determination of layer thickness and homogeneity, with a focus on characterizing advanced III‑V and diamond‑based device structures and epitaxial layers, including 150 mm substrates, to support process development, quality control and optimization at Fraunhofer IAF. 1 pc. The objective is to procure a highly sensitive SIMS instrument for depth‑profiled chemical analysis of semiconductor materials and structures, offering high depth resolution and high mass resolving power. The system shall enable precise dopant and impurity profiling, as well as accurate determination of layer thickness and homogeneity, with a focus on characterizing advanced III‑V and diamond‑based device structures and epitaxial layers, including 150 mm substrates, to support process development, quality control and optimization at Fraunhofer IAF. supplies false false 42990000 Freiburg 79108 DE131 DEU no-eu-funds 65.00 Technik Technik Technik Technik 35.00 Preis Price Preis Price none true selec-w 1 1 0 0 0 -1 large FRA false -1 2026-10-28+01:00